| PART |
Description |
Maker |
| 2SC5501A 2SC5501A-4-TR-E |
RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4
|
ON Semiconductor
|
| SB007T03C |
30V, 70mA Rectifier Schottky Barrier Diode (Series Connection)
30V/ 70mA Rectifier
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| SB007-03CP SB007-03CP-E |
30V/ 70mA Rectifier
Schottky Barrier Diode
30V, 70mA Rectifier
30V 70mA Rectifier
DIODE SCHOTTKY 30V 0.07A 3CP
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| IRG4BC10S IRG4BC10SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce（on）typ.1.10V @和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
|
| 2SD2397 2SD1866 2SD2143 2SD2212 |
Medium Power Transistor(Motor, Relay drive) (60±10V, 2A)
Medium Power Transistor(Motor, Relay drive) (60【10V, 2A)
|
ROHM[Rohm]
|
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 500mA的一（c）|
|
APEM SA
|
| NDHV310AFBE2 |
30mW; 5V; 70mA blue laser diode
|
NICHIA CORPORATION
|
| BUH417 |
V(cbo): 1700V; V(ceo): 700V; V(ebo): 10V; 7A; 55W; CRT horizontal deflection high voltage NPN fast switching transistor
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 7A I(C) | TO-218
|
SGS Thomson Microelectronics
|
